| PART |
Description |
Maker |
| M68Z512 M68Z512-70NC1T M68Z512NC |
4 Mbit 512Kb x8 Low Power SRAM with Output Enable
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| M27C405 4378 M27C405-90N6TR M27C405-100B1TR M27C40 |
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公512KB的存储器
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公12KB的存储器
Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x5 mm; Packaging: Bulk 4兆位× 8检察官办公12KB的存储器
From old datasheet system
4 Mbit (512Kb x 8) OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M48Z512A-85PM1 M48Z512AY-85PM1 M48Z512A-70PM1 |
4 MBIT (512KB X 8) ZEROPOWER SRAM
|
SGS Thomson Microelectronics
|
| M48Z512AY M48Z512A |
4 Mbit (512Kb x8) ZEROPOWER ? SRAM
|
STMicro
|
| M48Z512AY-85PM9 |
4 MBIT (512KB X 8) ZEROPOWER SRAM
|
ST Microelectronics
|
| M29W004B M29W004B-100N1TR M29W004B-100N5TR M29W004 |
NOT FOR NEW DESIGN - 4 MBIT (512KB X8, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| CY7C1387F-167BGC CY7C1387F-167BGI CY7C1387F-167BGX |
Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics.
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 18兆位（为512k × 36 / 1兆位× 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor Corp.
|
| CY7C1012DV33-10BGXI |
12-Mbit (512K X 24) Static RAM; Density: 12 Mb; Organization: 512Kb x 24; Vcc (V): 3.0 to 3.6 V; 512K X 24 STANDARD SRAM, 10 ns, PBGA119
|
Cypress Semiconductor, Corp.
|
| M48Z512A M48Z512A-70CS1 M48Z512A-70CS9 M48Z512A-70 |
CAP,TANT,CHIP,4.7UF,10%,25V
4 Mbit 512Kb x8 ZEROPOWER SRAM 4兆位的SRAM 512KB的x8 ZEROPOWER
|
http://
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| 4559 M34559G6-XXXFP |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER 单芯位微机的CMOS
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| M50LPW041N1T M50LPW041 M50LPW041K M50LPW041K1T M50 |
4 MBIT (512KB X8, UNIFORM BLOCK) 3V SUPPLY LOW PIN COUNT FLASH MEMORY
4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
